Ion contribution to the deposition of silicon dioxide in oxygen/silane helicon diffusion plasmas
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364103
Reference23 articles.
1. Role of ions in electron cyclotron resonance plasma-enhanced chemical vapor deposition of silicon dioxide
2. Relationships between the material properties of silicon oxide films deposited by electron cyclotron resonance chemical vapor deposition and their use as an indicator of the dielectric constant
3. Local bonding environments of Si–OH groups in SiO2 deposited by remote plasma‐enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor
4. Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films
5. Influence of ion energy on the physical properties of plasma deposited SiO2reset films
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1. Silicon Dioxide Coating of Titanium Dioxide Nanoparticles from Dielectric Barrier Discharge in a Gaseous Mixture of Silane and Nitrogen;Plasma Chemistry and Plasma Processing;2013-08-01
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3. Defining Plasma Polymerization: New Insight Into What We Should Be Measuring;ACS Applied Materials & Interfaces;2013-06-14
4. Low temperature growth of nanocrystalline TiO2 films with Ar/O2 low-field helicon plasma;Surface and Coatings Technology;2011-04
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