Elimination of interface states of Co2MnSi/MgO/Co2MnSi magnetic tunneling junction by inserting an Al atomic layer
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3540646
Reference15 articles.
1. Interfacial structure and half-metallic ferromagnetism inCo2MnSi-based magnetic tunnel junctions
2. Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctions
3. Half-metallic interface and coherent tunneling inCo2YZ/MgO/Co2YZ(YZ=MnSi,CrAl)magnetic tunnel junctions: A first-principles study
4. Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier
5. Half-metallic electronic structure of Co2MnSi electrodes in fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions investigated by tunneling spectroscopy (invited)
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