Tunable tunneling magnetoresistance in in-plane double barrier magnetic tunnel junctions based on B vacancy h-NB nanoribbons-Reference-Cited by-同舟云学术

Tunable tunneling magnetoresistance in in-plane double barrier magnetic tunnel junctions based on B vacancy h-NB nanoribbons

Published:2022 Issue:5 Volume:24 Page:3451-3459
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yu Hailin¹²^ORCID,Shao Zhenguang¹,Tao Yongmei¹,Jiang Xuefan¹,Dong Yaojun¹,Zhang Jie¹,Liu Yushen¹^ORCID,Yang Xifeng¹,Chen Dunjun²

Affiliation:

1. School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China

2. The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Abstract

The schematic structure of in-plane double barrier magnetic tunnel junction based on VB-ZBNNR and its transport properties under 0.01 V bias.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP04895C

Reference42 articles.

1. Elimination of interface states of Co2MnSi/MgO/Co2MnSi magnetic tunneling junction by inserting an Al atomic layer

2. Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

3. Tunable Magnetoelastic Effects in Voltage-Controlled Exchange-Coupled Composite Multiferroic Microstructures

4. High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Subnanometer Thick Al2O3 Tunnel Barriers Fabricated Using Atomic Layer Deposition

5. Novel Tunnel Magnetoresistive Sensor Functionalities via Oblique-Incidence Deposition

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