Low-temperature crystallization of high performance Pb0.4Sr0.6TiO3 films compatible with the current silicon-based microelectronic technology
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4807792
Reference20 articles.
1. PEROVSKITE THIN FILMS FOR HIGH-FREQUENCY CAPACITOR APPLICATIONS
2. Extremely High Tunability and Low Loss in Nanoscaffold Ferroelectric Films
3. Pb0.3Sr0.7TiO3 thin films for high-frequency phase shifter applications
4. Low-Temperature Processing of Ferroelectric Thin Films Compatible with Silicon Integrated Circuit Technology
5. Enhanced performance of Pb0.8La0.1Ca0.1Ti0.975O3/Pb(Nb0.01Zr0.2Ti0.8)O3 multilayer thin films for pyroelectric applications
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1. Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms;ACS Applied Electronic Materials;2021-08-10
2. Multiferroic and magnetoelectric properties of MnFe2O4/(Pb0.8Sr0.2)TiO3 composite films;Philosophical Magazine;2016-11-22
3. Multiferroic and magnetoelectric properties of CoFe2O4/Pb1−xSrxTiO3 composite films;Journal of Applied Physics;2015-04-28
4. Effect of LaNiO3 buffer layer on dielectric and tunable properties of Pb0.82La0.08Sr0.1Ti0.98O3 thin films on Pt/Ti/SiO2/Si substrates;Journal of Crystal Growth;2014-10
5. Temperature dependence of dynamic hysteresis behavior in Pb0.4Sr0.6TiO3 ferroelectric films;Solid State Communications;2014-08
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