Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms-Reference-Cited by-同舟云学术

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Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Published:2021-08-10 Issue:8 Volume:3 Page:3391-3399
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Ding Jiafen¹,Tong Haochen¹,Long Jia¹,Zhang Rui¹,Zhang Bolei¹,Wang Chong¹^ORCID,Yang Yu¹,Wang Rongfei¹,Shen Shili²,Xiong Kai¹,Yang Jie¹,Pan Hongchen³,Qiu Feng¹^ORCID

Affiliation:

1. School of Materials and Energy, National Center for International Research on Photoelectric and Energy Materials, Yunnan Key Laboratory for Micro/Nano Materials & Technology, Yunnan University, Kunming 650500, China

2. School of Ecology and Environmental Sciences, Yunnan University, Kunming 650500, China

3. Advanced Computing East China Sub-center, Suma Technology Co., Ltd., Kunshan 215300, China

Funder

Yunnan University

National Natural Science Foundation of China

Yunnan Province

Fujian Provincie

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00373

Reference54 articles.

1. Fe3O4/Fe/C composites prepared by a facile thermal decomposition method and their application as microwave absorbers

2. Ab initio prediction of the elastic, electronic and optical properties of a new family of diamond-like semiconductors, Li2HgMS4 (M = Si, Ge and Sn)

3. Atomistic Mechanisms of Mg Insertion Reactions in Group XIV Anodes for Mg-Ion Batteries

4. Charge‐Transport Processes in Host–Dopant Organic Semiconductors

5. Monolayered Silicon and Germanium Monopnictide Semiconductors: Excellent Stability, High Absorbance, and Strain Engineering of Electronic Properties

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