Flexible artificial synapses with robust bending stability based on all inorganic lead-free bismuth perovskite

Abstract

We demonstrated a flexible artificial synapse device with a structure of Al/Cs3Bi2I9/ITO. It is found that the device displays a resistive switching behavior, effectively simulating the potentiation and depression processes observed in synapses under varying bending angles. Synaptic functions, such as excitatory postsynaptic current and paired-pulse facilitation, were performed. Furthermore, we conducted a systematic investigation into the impact of pulse amplitude, pulse width, and pulse number on the synaptic weight. Additionally, long-term plasticity was simulated by precisely controlling the time intervals between pre-synaptic and post-synaptic pulses. Remarkably, our prepared flexible artificial synapse exhibited exceptional flexibility and robustness, with no significant alteration in conductance even after undergoing 2000 bending cycles. This study establishes the feasibility of manufacturing lead-free halide perovskite-based artificial synapses for applications in flexible electronics.