Disordering of AlAs‐GaAs superlattices by Si and S implantation at different implant temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337497
Reference22 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion
3. Disordering of Ga1−xAlxAs‐GaAs quantum well structures by donor sulfur diffusion
4. Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
5. Dose‐dependent mixing of AlAs‐GaAs superlattices by Si ion implantation
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1. Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2016
2. Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms;IEEE Journal of Selected Topics in Quantum Electronics;1998
3. Lattice position of Si in GaAs determined by x‐ray standing wave measurements;Journal of Applied Physics;1993-06-15
4. Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures;Journal of Applied Physics;1992-08-15
5. Ion mixing of III‐V compound semiconductor layered structures;Journal of Applied Physics;1992-03-15
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