Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3277044
Reference17 articles.
1. Silicon surface tunnel transistor
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3. Comparing Carbon Nanotube Transistors—The Ideal Choice: A Novel Tunneling Device Design
4. Tunnel field-effect transistor without gate-drain overlap
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