High‐power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes-Reference-Cited by-同舟云学术

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High‐power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes

Published:1993-03-08 Issue:10 Volume:62 Page:1062-1064
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Garbuzov D. Z.,Antonishkis N. Ju.,Zhigulin S. N.,Il’inskaya N. D.,Kochergin A. V.,Lifshitz D. A.,Rafailov E. U.,Fuksman M. V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.108795

Reference7 articles.

1. Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes

2. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

3. High‐power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process

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1. Synthesis of silicon carbide nanocrystals from waste polytetrafluoroethylene;Dalton Transactions;2017

2. High-power 1060-nm InGaAs/GaAs single-mode laser diodes;SPIE Proceedings;2005-03-17

3. Output Radiation Focusing in Curved-Grating Distributed Bragg Reflector Laser;Technical Physics Letters;2005

4. Reliable high-power single-mode GaAlAs/GaAs laser diodes mounted epi-side up;SPIE Proceedings;2004-06-01

5. Self-focused distributed Bragg reflector laser diodes;Journal of Applied Physics;2004-02

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