High-power 1060-nm InGaAs/GaAs single-mode laser diodes-Reference-Cited by-同舟云学术

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High-power 1060-nm InGaAs/GaAs single-mode laser diodes

Published:2005-03-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Gao Wei,Mastrovito Andre,Luo Kejian,Cheng Lisen,Nelson Alan,Yang Tom,Xu Zuntu

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gallium Arsenide Photonic Integrated Circuit Platform for Tunable Laser Applications;IEEE Journal of Selected Topics in Quantum Electronics;2022-01

2. Effect of the QW number to produce circular single-mode beam in 1060 nm laser diodes;2021 Iranian International Conference on Microelectronics (IICM);2021-12-22

3. High power 1060-nm super large vertical cavity semiconductor lasers;SPIE Proceedings;2014-11-17

4. Design and fabrication of high power single mode double-trench ridge waveguide laser;SPIE Proceedings;2014-03-07

5. Optimization of waveguide structure for high power 1060 nm diode laser;JOURNAL OF INFRARED AND MILLIMETER WAVES;2012-09-10

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