Band gap bowing parameter in pseudomorphic AlxGa1−xN/GaN high electron mobility transistor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922286
Reference25 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design
3. M. S. Shur and M. A. Khan , GaN and Related Materials II, edited by S. J. Pearton ( Gordon and Breach, Amsterdam, 2000), p. 47.
4. Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer
5. Observation of hot luminescence and slow inter-sub-band relaxation in Si-doped GaN∕AlxGa1−xN (x=0.11, 0.25) multi-quantum-well structures
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