Origin of the dependence of magnetoresistance on the composition of Co100−xFex electrodes in magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2840128
Reference38 articles.
1. Magnetoelectronics
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4. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
5. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction
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2. Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS;Journal of Magnetism and Magnetic Materials;2012-05
3. Compositional effect of bcc Co100−x Fe x electrodes on magnetoresistance in AlO x -based magnetic tunnel junctions;Applied Physics A;2010-01-30
4. Tuning exchange coupling by replacing CoFe with amorphous CoFeB in the CoFe/Ru/CoFe synthetic antiferromagnetic structure;Solid State Communications;2010-01
5. Effect of Ta buffer layer and TaO x barrier thickness on the evolution of the structural and magnetic properties of the Fe/TaO x /Co trilayers;Applied Physics A;2009-08-28
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