Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS-Reference-Cited by-同舟云学术

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Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS

Published:2012-05 Issue:10 Volume:324 Page:1837-1844
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Shi Fengyuan,Xiang Hua,Yang J. Joshua,Rzchowski M.S,Chang Y.A.,Voyles P.M.

Funder

the US Department of Energy, Basic Energy Sciences

the Wisconsin Alumni Research Foundation (WARF)

the Wisconsin Distinguished Professorship

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference49 articles.

1. Magnetoelectronics;Prinz;Science,1998

2. Picotesla field sensor design using spin-dependent tunneling devices;Tondra;Journal of Applied Physics,1998

3. Tunneling between ferromagnetic films;Julliere;Physics Letters A,1975

4. Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO(001) barrier;Yuasa;Journal of Physics D: Applied Physics,2007

5. Electron states, magnetism, and the Verwey transition in magnetite;Zhang;Physical Review B,1991

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inverse tunnel magnetoresistance in epitaxial FeCo/MgO/Fe tunnel junctions patterned by in situ shadow-masks;Journal of Alloys and Compounds;2016-03

2. Experimental investigations of SiO2 based ferrite magnetic tunnel junction;Materials Science and Engineering: B;2013-09

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