Electron kinetics of silane discharges
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94226
Reference10 articles.
1. Effects of inert gas dilution of silane on plasma‐deposited a‐Si:H films
2. Effects of rf power and reactant gas pressure on plasma deposited amorphous hydrogenated silicon
3. Ion and radical reactions in the silane glow discharge deposition of a-Si:H films
4. Emission cross sections from fragments produced by electron impact on silane
5. Dissociation cross sections of silane and disilane by electron impact
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2. 1.5-nm-thick silicon oxide gate films grown at 150°C using modified reactive ion beam deposition with pyrolytic-gas passivation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-03
3. Electron transport coefficients in SiH4and Si2H6in dc and rf fields;Journal of Physics D: Applied Physics;2003-07-31
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