Effects of rf power and reactant gas pressure on plasma deposited amorphous hydrogenated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328616
Reference24 articles.
1. Characterized of glow-discharge deposited a-Si:H
2. Characterized of glow-discharge deposited a-Si:H
3. Defects in plasma-deposited a-Si: H
4. Optical properties and hydrogen concentration in amorphous silicon
5. Plasma preparations of amorphous silicon films
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2. Photoconducting a-Si:H films grown at high deposition rates by pulsing a VHF 100 MHz discharge;Thin Solid Films;2003-01
3. Methods of deposition of hydrogenated amorphous silicon for device applications;Handbook of Thin Films;2002
4. Methods of Deposition of Hydrogenated Amorphous Silicon for Device Applications;Thin Films and Nanostructures;2002
5. In situ UV-visible and Infrared ellipsometry study of the influence of silane dilution on the growth of hydrogenated amorphous silicon;Journal of Non-Crystalline Solids;1993-12
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