Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1534939
Reference19 articles.
1. Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells
2. Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs
3. 1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells
4. 1.45 µm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
5. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
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2. Investigation of optical response in type-II InAs/AlSb nano-scale heterostructure: A novel dual structure;Materials Today: Proceedings;2018
3. Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure;Optik;2017-10
4. Investigation of high optical gain in complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure for MIR applications;Applied Optics;2017-05-11
5. Transformation of type-II InAs/AlSb nanoscale heterostructure into type-I structure and improving interband optical gain;physica status solidi (b);2017-01-04
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