Deep level transient spectroscopy studies of epitaxial silicon layers on silicon‐on‐insulator substrates formed by oxygen implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98745
Reference3 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Series resistance effects in semiconductor CV profiling
3. Transient capacitance measurements on resistive samples
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1. Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy;Japanese Journal of Applied Physics;2004-05-11
2. Interface states and deep-level centers in silicon-on-insulator structures;Semiconductors;2001-08
3. Effect of rapid thermal annealing on the electrical properties of ion-beam-synthesized oxide layers using 12 keV O2+ bombardment of Si;Surface and Interface Analysis;2001
4. Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen;Journal of The Electrochemical Society;1999-09-01
5. Method for Measuring Deep Levels in Thin Silicon‐on‐Insulator Layer Without Any Interface Effects;Journal of The Electrochemical Society;1998-10-01
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