Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1839556
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1. Neutral radical deposition from silane discharges
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4. Reversible conductivity changes in discharge‐produced amorphous Si
5. Direct Role of Hydrogen in the Staebler-Wronski Effect in Hydrogenated Amorphous Silicon
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