The role of water vapor during the synthesis of hydrogen doped In 2 O 3
Author:
Affiliation:
1. Physics Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA
2. Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0011975
Reference37 articles.
1. Tin doped indium oxide thin films: Electrical properties
2. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows
3. Electrical and structural properties of low resistivity tin‐doped indium oxide films
4. Electrical properties and defect model of tin-doped indium oxide layers
5. Hydrogen-doped In2O3as High-mobility Transparent Conductive Oxide
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1. Revealing the Chemical State of Palladium in Operating In2O3 Gas Sensors: Metallic Pd Enhances Sensing Response and Intermetallic InxPdy Compound Blocks It;ChemPhysChem;2023-03-06
2. Influence of Surface Adsorption on the Electrical Transport Properties of Ultrathin Indium Tin Oxide Films;The Journal of Physical Chemistry C;2021-07-23
3. Analysis of defects in In2O3:H synthesized in presence of water vapor and hydrogen gas mixture;Journal of Applied Physics;2021-01-28
4. Thermal and Damp Heat Stability of High‐Mobility In 2 O 3 ‐Based Transparent Conducting Films Fabricated at Low Process Temperatures;physica status solidi (a);2021-01-15
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