Dual-spacer nanojunctions exhibiting large current-perpendicular-to-plane giant magnetoresistance for ultrahigh density magnetic recording
Author:
Affiliation:
1. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
2. Center for Spintronics Research Network (CSRN), Tohoku University, Sendai 980-8577, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4977948
Reference32 articles.
1. Roadmap for Emerging Materials for Spintronic Device Applications
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4. Tunnel Magnetoresistance and Spin-Transfer-Torque Switching in PolycrystallineCo2FeAlFull-Heusler-Alloy Magnetic Tunnel Junctions on AmorphousSi/SiO2Substrates
5. Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions
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