Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics-Reference-Cited by-同舟云学术

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Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

Published:2014-03-10 Issue:10 Volume:104 Page:102901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

King Sean W.,Paquette Michelle M.,Otto Joseph W.,Caruso A. N.,Brockman Justin,Bielefeld Jeff,French Marc,Kuhn Markus,French Benjamin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4867890

Reference47 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. A role for graphene in silicon-based semiconductor devices

3. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

4. Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies

5. Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

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4. Effect of the boron-to-nitrogen ratio on leakage current characteristics of boron nitride films prepared by surface-wave plasma enhanced chemical vapor deposition;Thin Solid Films;2020-07

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