Diffusion, activation, and regrowth behavior of high dose P implants in Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2196227
Reference20 articles.
1. Ion Implanted N-Type Contact for High-Purity Germanium Radiation Detectors
2. Properties of Heavily Doped n‐Type Germanium
3. Germanium n-type shallow junction activation dependences
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