HOT‐HOLE ANISOTROPY IN SILICON
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653055
Reference9 articles.
1. Anisotropy of conductivity due to warm holes inp-type germanium andp-type silicon
2. On a new method for measuring the charge carriers drift mobility in high resistivity silicon
3. Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique
4. MEASUREMENT OF THE VELOCITY FIELD CHARACTERISTIC OF ELECTRONS IN GERMANIUM
5. Electrons and holes drift velocity in silicon at very low temperature
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Carrier drift mobility study in neutron irradiated high purity silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1995-08
2. Drift mobility measurements in thin epitaxial semiconductor layers using time-of-flight techniques;Solid-State Electronics;1974-08
3. Impurity scattering of warm holes in germanium and silicon;Journal of Physics and Chemistry of Solids;1972-01
4. Drift Velocity and Trapping in Semiconductors—Transient Charge Technique;Applied Solid State Science;1972
5. Transport Properties of CdTe;Physical Review B;1971-07-15
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