On a new method for measuring the charge carriers drift mobility in high resistivity silicon-Reference-Cited by-同舟云学术

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On a new method for measuring the charge carriers drift mobility in high resistivity silicon

Published:1965-07 Issue:2 Volume:17 Page:102
ISSN:0031-9163
Container-title:Physics Letters
language:en
Short-container-title:Physics Letters

Author:

Alberigi Quaranta A.,Cipolla F.,Martini M.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference3 articles.

1. Mobility of Holes and Electrons in High Electric Fields

2. Progress in semiconductors;Gunn,1965

3. Proc. 1958 Conf. on Semiconductors;Prior,1959

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1. Characterization of CdMnTe radiation detectors using current and charge transients;Journal of Semiconductors;2013-07

2. Drift velocity and diffusion coefficients from time-of-flight measurements;Topics in Applied Physics;1985

3. Time-of-Flight Techniques;Physics of Nonlinear Transport in Semiconductors;1980

4. Measurement of the Electron Velocity-Field Characteristics in Germanium Using a New Technique;Physical Review B;1973-03-15

5. Drift Velocity and Trapping in Semiconductors—Transient Charge Technique;Applied Solid State Science;1972

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