Temperature Limitation on Continuous Operation of GaAs Lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1729214
Reference4 articles.
1. Threshold Currents for Line Narrowing in GaAs Junction Diodes
2. Laser Conditions in Semiconductors
3. QUANTUM EFFICIENCY OF GaAs INJECTION LASERS
4. Room temperature operation of gallium arsenide lasers
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Halbleiterlaser;Optoelektronik I;1981
2. Investigation of the temperature distribution over the surface of semiconductor infrared radiation sources;Soviet Physics Journal;1978-06
3. Investigation of Injection Lasers;Quantum Electronics in Lasers and Masers;1972
4. Dependence of the junction temperature rise on laser length in GaAs laser diodes operated continuously at 77°K;International Journal of Electronics;1970-02
5. Current Dependence of Junction Temperature in C-W Operated GaAs Laser Diodes;Japanese Journal of Applied Physics;1967-08
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