Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems-Reference-Cited by-同舟云学术

Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems

Published:2014-09-22 Issue:12 Volume:105 Page:123114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tóvári E.¹,Csontos M.¹,Kriváchy T.¹,Fürjes P.²,Csonka S.¹

Affiliation:

1. Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki út 8, H-1111 Budapest, Hungary

2. MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege út 29-33, H-1121 Budapest, Hungary

Funder

ERC

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896515

Reference33 articles.

1. Nanoelectromechanical Systems

2. Nanoelectromechanical systems

3. Engineering Graphene Mechanical Systems

4. Nonlinear damping in mechanical resonators made from carbon nanotubes and graphene

5. Powering an Inorganic Nanodevice with a Biomolecular Motor

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