High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics-Reference-Cited by-同舟云学术

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

Published:2014-12-21 Issue:23 Volume:116 Page:233504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Valdueza-Felip S.,Bellet-Amalric E.,Núñez-Cascajero A.,Wang Y.,Chauvat M.-P.,Ruterana P.^ORCID,Pouget S.,Lorenz K.,Alves E.,Monroy E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903944

Reference40 articles.

1. Modeling of InGaN/Si tandem solar cells

2. Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell

3. Solid phase immiscibility in GaInN

4. Properties of Ga1-xInxN Films Prepared by MOVPE

5. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

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