High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
Author:
Affiliation:
1. HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, California 90265, USA
Funder
Microsoft Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/apl/106/3/1.4906589.pdf?itemId=/content/aip/journal/apl/106/3/10.1063/1.4906589&mimeType=pdf&containerItemId=content/aip/journal/apl
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2. Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells;Physical Review B;2024-03-27
3. Growth of GaSb on GaAs substrate by Interfacial Misfit arrays;J INFRARED MILLIM W;2021
4. Topological band structure in InAs/GaSb/InAs triple quantum wells;Physical Review B;2021-08-05
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