Room-temperature ferromagnetism in p-type ZnO:N films prepared by oxidizing Zn3N2 in oxygen plasma
Author:
Affiliation:
1. Institute of Modern Physics, Fudan University, Shanghai 200433, China
2. Department of Physics and Astronomy, San Francisco State University, San Francisco, California 94132, USA
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5042283
Reference26 articles.
1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
2. Fundamentals of zinc oxide as a semiconductor
3. Origin ofp-type doping difficulty in ZnO: The impurity perspective
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5. P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO
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