Author:
Robey S. W.,Jaso M. A.,Oehrlein G. S.
Subject
General Physics and Astronomy
Cited by
14 articles.
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1. Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-07
2. Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
3. Plasma etching of ternary silicide top layers;Microelectronic Engineering;2000-01
4. Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
5. Reactive ion etching of CoSi2 in a CF4/Ar plasma;Applied Surface Science;1999-01