Dry etching of TiSi2
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.573822
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-resistivity C54-TiSi2 as a sidewall-confinement nanoscale electrode for three-dimensional vertical resistive memory;Applied Physics Letters;2014-11-03
2. Reactive ion etching of CoSi2 in a CF4/Ar plasma;Applied Surface Science;1999-01
3. Surface processes occurring on TiSi[sub 2] and CoSi[sub 2] in fluorine-based plasmas: Afterglow of a NF[sub 3] plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01
4. Surface processes occurring on TiSi2 and CoSi2 in fluorine-based plasmas. Reactive ion etching in CF4/CHF3 plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-11
5. Characterization of Titanium Etching in Cl2 / N 2 Plasmas;Journal of The Electrochemical Society;1997-05-01
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