Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence-Reference-Cited by-同舟云学术

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Author:

Ji Hai-Ming¹²,Liang Baolai³,Simmonds Paul J.³^ORCID,Juang Bor-Chau¹,Yang Tao²,Young Robert J.⁴,Huffaker Diana L.¹³

Affiliation:

1. Department of Electrical Engineering, University of California Los Angeles, Los Angeles, California 90095, USA

2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095, USA

4. Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom

Funder

National Science Foundation of China

UC Lab Fees Research Program

University Research Fellow

U.S. Department of Defense (DOD)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference22 articles.

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