Enhanced performance of quantum dot solar cells based on type II quantum dots
Author:
Affiliation:
1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4895476
Reference31 articles.
1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
2. Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design
3. Quantum dot solar cells
4. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell
5. Effect of strain compensation on quantum dot enhanced GaAs solar cells
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