A reflection high‐energy electron diffraction study of the Si(111) surface during gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350572
Reference20 articles.
1. Gas source Si-MBE
2. Selective growth condition in disilane gas source silicon molecular beam epitaxy
3. Thermal and photostimulated reactions on Si2H6-adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic-layer epitaxy
4. Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1
5. Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfaces
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nanocrystal seeding: A low temperature route to polycrystalline Si films;Applied Physics Letters;1994-06-27
2. Si1−xGex alloy growth on Si(111) surfaces from gaseous hydride sources;Surface Science;1993-12
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