Si-capping of Ge nanohuts on Si(001) analyzed by scanning tunneling microscopy and the finite element method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1787958
Reference20 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Nucleation of ``Hut'' Pits and Clusters during Gas-Source Molecular-Beam Epitaxy of Ge/Si(001) inIn SituScanning Tunnelng Microscopy
3. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
4. Evolution of Ge islands on Si(001) during annealing
5. Strain-Driven Alloying in Ge/Si(100) Coherent Islands
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1. Formation of Uniform Germanium Islands on Silicon Substrate Using Nickel as Catalyst by Thermal Evaporation Method;Acta Physica Polonica A;2015-04
2. The evolution of Si-capped Ge islands on Si (100) by RF magnetron sputtering and rapid thermal processing: The role of annealing times;Microelectronic Engineering;2014-08
3. Self-assembled Ge islands and nanocrystals by RF magnetron sputtering and rapid thermal processing: The role of annealing temperature;Applied Surface Science;2013-06
4. Evidence of electronic growth in titanium- and cobalt-silicide islands;Journal of Materials Science;2010-03-25
5. Growth of Ge islands and nanocrystals using RF magnetron sputtering and their characterization;Nanotechnology;2007-04-02
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