Removal of end-of-range defects in Ge+-pre-amorphized Si by carbon ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369694
Reference19 articles.
1. Electrical properties of shallowp+‐njunctions formed by BF2ion implantation in germanium preamorphized silicon
2. Shallow boron junctions and preamorphization for deep submicron silicon technology
3. A systematic analysis of defects in ion-implanted silicon
4. Transient boron diffusion in ion‐implanted crystalline and amorphous silicon
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