High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102133
Reference11 articles.
1. Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors
2. A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration
3. Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition
4. High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy
5. Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits
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1. Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors;Journal of Crystal Growth;2007-04
2. Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs;IEEE Transactions on Electron Devices;2002
3. Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor;Japanese Journal of Applied Physics;1995-11-15
4. Reliability issues for III-V heterojunction bipolar transistors;Microelectronics Reliability;1995-04
5. A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs;Journal of Electronic Materials;1994-08
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