Reliability issues for III-V heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Reliability issues for III-V heterojunction bipolar transistors

Published:1995-04 Issue:4 Volume:35 Page:713-724
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Roenker K.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference85 articles.

1. Subpicosecond InP/InGaAs heterostructure bipolar transistors

2. Indium Phosphide and Related Materials: Processing, Technology and Devices;Jalali,1992

3. High Speed Electronics and Device Scaling;Jensen,1990

4. Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

5. Digital integrated circuit using GaInAs/Inp heterojunction bipolar transistors

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1. Feasibility Assessment and Analysis of a Forward Injected Photonic Crystal Device;IEEE Transactions on Nanotechnology;2009-05

2. Gallium Arsenide;Springer Handbook of Electronic and Photonic Materials;2006

3. Chemical Limit to Semiconductor Device Miniaturization;Electrochemical and Solid-State Letters;1999

4. Reliability life-testing and failure-analysis of GaAs monolithic Ku-band driver amplifiers;IEEE Transactions on Reliability;1998-06

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