Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1509478
Reference16 articles.
1. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
2. Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes
3. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
4. 1.21 µm Continuous-Wave Operation of Highly Strained GaInAs Quantum Well Lasers on GaAs Substrates
5. 1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition
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