A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4899985
Reference57 articles.
1. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
2. Degradation of hexagonal silicon-carbide-based bipolar devices
3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
4. Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
5. Conductivity Degradation of 4H-SiC p–i–n Diode with In-Grown Stacking Faults
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1. Micro-Raman evaluation of 200 mm SiC material;Microelectronic Engineering;2023-03
2. Measuring Techniques for the Semiconductor’s Parameters;Springer Handbook of Semiconductor Devices;2022-11-11
3. Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications;Micromachines;2022-06-30
4. Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications;Materials;2021-02-19
5. An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis;Materials Science Forum;2020-07
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