A reduced moment‐based model for precipitation kinetics and application to dopant activation in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360381
Reference17 articles.
1. Verification of analytic point defect models using SUPREM-IV (dopant diffusion)
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4. Shallow junctions by high‐dose As implants in Si: experiments and modeling
5. Precipitation as the Phenomenon Responsible for the Electrically Inactive Arsenic in Silicon
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1. A reduced moment-based model for oxygen precipitation in silicon;Journal of Applied Physics;2013-12-28
2. Modeling of nucleation and evolution of hydrogen-induced platelets in silicon crystals;physica status solidi (c);2009-08
3. Transient-diffusion effects;Applied Physics A: Materials Science & Processing;2003-05-01
4. A combined model for {311} defect and dislocation loop evolution: Analytical formulation of kinetic precipitation model;Journal of Applied Physics;2002-03
5. Current status of models for transient phenomena in dopant diffusion and activation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
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