Thermal stability improvement by using Pd∕NiO∕Al∕Ti∕Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2173245
Reference18 articles.
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3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
4. High responsitivity intrinsic photoconductors based on AlxGa1−xN
5. Directional coupler electro‐optic modulator in AlGaAs/GaAs with low voltage‐length product
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1. Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes;Materials;2023-10-06
2. Structural and electrical properties of Pd/p-GaN contacts for GaN-based laser diodes;Journal of Vacuum Science & Technology B;2020-05
3. High-reflectance of hybrid reflector with distributed Bragg reflector and metal mirror for flip-chip ultra-violet light-emitting diodes;International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies;2014-12-18
4. High Performance of GaN-Based Flip-Chip Light-Emitting Diodes with Hole-Shape Patterned ITO Ohmic Contact Layer and AgIn Reflector;Journal of Nanoscience and Nanotechnology;2011-10-01
5. Contacts to Wide-Band-Gap Semiconductors;Comprehensive Semiconductor Science and Technology;2011
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