Electric field induced charge migration and formation of conducting filament during resistive switching in electrochemical metallization (ECM) memory cells
Author:
Affiliation:
1. School of Materials Science and Engineering, Kookmin University, Seoul 02707, South Korea
Funder
National Research Foundation of Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0026350
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1. Neuromorphic computing using non-volatile memory
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