Thermoelectric transport at F4TCNQ–silicon interface-Reference-Cited by-同舟云学术

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Thermoelectric transport at F4TCNQ–silicon interface

Published:2019-02 Issue:2 Volume:7 Page:021104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Liu Naiming¹^ORCID,Peters Jonathan²,Ramu Ashok²,Floro Jerrold A.¹^ORCID,Bowers John E.²,Zebarjadi Mona¹³

Affiliation:

1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

3. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5050537

Reference46 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

3. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

4. Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy

5. Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enabling Oxidation Protection and Carrier-Type Switching for Bismuth Telluride Nanoribbons via in Situ Organic Molecule Coating;Nano Letters;2023-12-11

2. Enhanced thermoelectric performance of holey silicon thin films using F4TCNQ surface doping;Materials Today Physics;2023-01

3. Out-of-plane transient thermal conductivity measurements for bulk semiconducting conjugated polymers using fast scanning calorimetry;Sustainable Energy & Fuels;2023

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