γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism-Reference-Cited by-同舟云学术

γ-GeSe: A two-dimensional ferroelectric material with doping-induced ferromagnetism

Published:2019-12-16 Issue:25 Volume:115 Page:252904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Chang¹^ORCID,Guan Shan²,Yin Huabing¹^ORCID,Wan Wenhui³,Wang Yuanxu¹^ORCID,Zhang Ying⁴

Affiliation:

1. Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China

4. Department of Physics, Beijing Normal University, Beijing 100875, China

Funder

China Postdoctoral Science Foundation

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

National Key Research and Development Program of China

Strategic Priority Research Program of Chinese Academy of Sciences

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5133022

Reference48 articles.

1. Applications of Modern Ferroelectrics

2. Multiferroic magnetoelectric nanostructures for novel device applications

3. Critical thickness for ferroelectricity in perovskite ultrathin films

4. Ferroelectricity in Ultrathin Perovskite Films

5. Absence of Ferromagnetism or Antiferromagnetism in One- or Two-Dimensional Isotropic Heisenberg Models

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