Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation-Reference-Cited by-同舟云学术

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Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation

Published:2023 Issue: Volume: Page:
ISSN:0094-243X
Container-title:VII INTERNATIONAL CONFERENCE “SAFETY PROBLEMS OF CIVIL ENGINEERING CRITICAL INFRASTRUCTURES” (SPCECI2021)
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Author:

Gulyamov Gafur,Shahobiddinov Bahodir,Soliyev Alisher,Nazarov Shoxruh,Mislidinov Baxtiyor

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0124940

Reference15 articles.

1. Fabrication of spray derived nanostructured n-ZnO/p-Si heterojunction diode and investigation of its response to dark and light

2. Calculation of characteristics parameters of Au /methyl green/n-Si/Ag diodes from the current-voltage measurements

3. A New Method for Fitting Current–Voltage Curves of Planar Heterojunction Perovskite Solar Cells

4. I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

5. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode;Romanian Journal of Physics;2024-05-15

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