Single scan defect identification by deep level transient spectroscopy using a two‐phase lock‐in amplifier (IQ‐DLTS)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340047
Reference11 articles.
1. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
2. New Developments in Defect Studies in Semiconductors
3. A correlation method for semiconductor transient signal measurements
4. Rapid computer-controlled capacitance transient characterization of deep-level centers
5. Capacitance Transient Spectroscopy
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1. Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si;Critical Reviews in Solid State and Materials Sciences;2004-01
2. Chapter 2 Defect Identification Using Capacitance Spectroscopy;Semiconductors and Semimetals;1999
3. Defect Characterization of Sputter Deposited Au Contacts on N-TypeSi1-xGex;Japanese Journal of Applied Physics;1997-02-15
4. Chapter 6 Photothermal Deep-Level Transient Spectroscopy of Impurities and Defects in Semiconductors;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
5. Metal contacts to gallium arsenide;Journal of Electronic Materials;1996-11
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