Single Crystalline Zinc Oxide Nanorods Grown by R-F Sputtering Technique Onto P-Si Substrate for Sensing Applications

Abstract

A high-quality, single-crystal ZnO nanorod thin film was successfully deposited onto p-type monocrystalline silicon (P-Si) substrates using an RF sputtering technique. An XRD analysis of ZnO nanorods was carried out to investigate crystallinity and aspect ratio of the deposited thin film. Adjusting deposition conditions makes it possible to grow single-crystalline ZnO nanorods with preferred orientations (002) on the substrate. More than the substrate type, crystal size is determined by single-crystal growth conditions. These sample had the exact. With the exception of a small variance at Raman shifts 414 cm-1, which correspond to E2. Raman spectra measurements with a slight variation at Raman shifts 414 cm-1, corresponding to E2 (high). In response to the compressive stress, the peak shifts upwards (blue dress). Data from FE-SEM shows vertical growth of hexagonal prism. Finally, the hall effect measurement and UV-vis spectroscopy were carried out the electrical and optical properties of the sample respectively.