Modeling of Gan Hemt by Using an Improved K-Nearest Neighbors Algorithm-Reference-Cited by-同舟云学术

Modeling of Gan Hemt by Using an Improved K-Nearest Neighbors Algorithm

Author:

Sang L.¹,Xu Y.²,Cao Rui³,Chen Y.⁴,Guo Y.⁵,Xu R.⁶

Affiliation:

1. a EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

2. b EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

3. c 38th Research Institute of China Electronics Technology Group Corporation (CETC38) Hefei 230088, China

4. d EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

5. e EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

6. f EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China Chengdu 611731, China

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials

Link

Reference14 articles.

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