Accurate Modeling of Minimum Noise Figure in Algan/Gan High Electron Mobility Transistors-Reference-Cited by-同舟云学术

Accurate Modeling of Minimum Noise Figure in Algan/Gan High Electron Mobility Transistors

Author:

Xu Y.¹,Guo Y.²,Wu Y.³,Xu R.⁴,Yan B.⁵,Lin W.⁶

Affiliation:

1. a EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China

2. b EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China

3. c EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China

4. d EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China

5. e EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China

6. f EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu 611731, China

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials

Link

Reference32 articles.

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